FQPF7P20 Datasheet, ON Semiconductor

* −5.2 A, −200 V, RDS(on) = 690 mW (Max.) @ VGS = −10 V, ID = −2.6 A
* Low Gate Charge (Typ. 19 nC)
* Low Crss (Typ. 25 pF)
* 100% Avalanche Tested DATA .

Features
* −5.2 A, −200 V, RDS(on) = 690 mW (Max.) @ VGS = −10 V, ID = −2.6 A
* Low Gate Charge (Typ. 19 nC)

This P−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching perfo.